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HB01100 - SEMI HB11 - Specification for Sapphire Single Crystal Ingot Intended for Use for Manufacturing HB-LED Wafers StdPbc-0620 It is assumed for the

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Description

It is assumed for the purposes of this Guide that the test method evaluated by the interlaboratory study (ILS) is appropriate for determining the property values of the ConRef

This Document covers requirements for hexafluoroethane used in the semiconductor industry

measurement

·    Ultrasonic generators

polycrystalline

HB01100 - SEMI HB11 - Specification for Sapphire Single Crystal Ingot Intended for Use for Manufacturing HB-LED Wafers StdPbc-0620 It is assumed for theThe sapphire single crystal ingot is used as a substrate material for HB LED applications. To permit common processing equipment to be used in multiple device fabrication lines, it is essential for the sapphire single crystal ingot specifications to be standardized. This Specification provides the characteristics of sapphire single crystal ingot, consisting of the physical specification, orientation, shape, and defect standard. This Specification is

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