M06600 - SEMI M66 - Test Method to Extract Effective Work Function in Oxide and High-K Gate Stacks Using the MIS Flat Band Voltage-Insulator Thickness Technique StdPbc-0221 SEMI E70-1213 (Reapproved 1021)

SEMI E70-1213 (Reapproved 1021)

SEMI D21-0706 (Reapproved 0221)

SEMI S22 — Safety Guideline for the Electrical Design of Semiconductor Manufacturing Equipment

and suitability of instrumentation as indicated in Table 1

or with epitaxial film

M06600 - SEMI M66 - Test Method to Extract Effective Work Function in Oxide and High-K Gate Stacks Using the MIS Flat Band Voltage-Insulator Thickness Technique StdPbc-0221 SEMI E70-1213 (Reapproved 1021)Continued scaling of CMOS integrated circuit dimensions is reaching a point where materials changes as well as lithographic advances are required to meet the projections of Moores Law and the International Technology Roadmap for Semiconductors. As gate dielectric thickness approaches 1 nm, both the gate dielectric and electrode materials that have been in common usageSiO2, and doped polysiliconare displaying characteristics that are unacceptable for