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3D00500 - SEMI 3D5 - Guide for Metrology Techniques to be Used in Measurement of Geometrical Parameters of Through-Silicon Vias (TSVs) in 3DS-IC Structures StdTpc-Chemical & Gas Distribution Systems The glass substrate is in

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Description

The glass substrate is in shape of a wafer (round) or a panel (square or rectangular)

specifications

tetrakis(dimethylamino) hafnium

The scope of this Document is limited to the definitions of terms used to specify measured quantities that characterize TSV

本文書の目的は,半導体産業で使用される水酸化ナトリウム50%溶液に対する要求条件を標準化し,またこれらのスタンダードをサポートする試験手順を標準化することである。試験方法は,統計的に有効な結果を示している。SEMI C1の通り代替法の妥当性が確認されたなら,それを使用してもよい。

3D00500 - SEMI 3D5 - Guide for Metrology Techniques to be Used in Measurement of Geometrical Parameters of Through-Silicon Vias (TSVs) in 3DS-IC Structures StdTpc-Chemical & Gas Distribution Systems The glass substrate is inThis Guide will assist the user in selection and use of tools for performing measurements of geometrical parameters of an individual through silicon via (TSV), or of an array of TSVs. TSVs are expected to be a critical element in future three dimensional stacked integrated circuit (3DS IC) packaging. Advanced TSV designs with higher aspect ratios and smaller diameters may challenge TSV metrology techniques. This Guide will address the various

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