MF163000 - SEMI MF1630 - Test Method for Low Temperature FT-IR Analysis of Single Crystal Silicon for III-V Impurities StdPbc-0310 This Guide is intended to

This Guide is intended to promote interoperable application of XML in a variety of semiconductor manufacturing usage contexts

The specifications and the associated test procedures are guidelines based on the experience of suppliers and users

1  The diameters of the different wafers that comprise the stack may differ from each other

SEMI E5-0821 (technical revision)

This Document is intended to define a set of requirements to ensure interoperability of load ports and carriers without limiting innovative solutions

MF163000 - SEMI MF1630 - Test Method for Low Temperature FT-IR Analysis of Single Crystal Silicon for III-V Impurities StdPbc-0310 This Guide is intended toThis Test Method covers the determination of electrically active boron, phosphorus, arsenic, aluminum, antimony, and gallium concentration in single crystal silicon. This Test Method can be used for silicon in which the impurity dopant concentrations are between 0. 01 ppba and 5 ppba for each of the electrically active elements. The concentration for each impurity dopant can be obtained by application of Beers Law. Calibration factors are given for