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M04200 - SEMI M42 - Specification for Compound Semiconductor Epitaxial Wafers Revision:SEMI M42-0816 (Withdrawn 1021) - Withdrawn org in April 2017

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Description

org in April 2017

This Guide will assist users in selection and use of bond-void metrology equipment and a protocol for performing bond-void measurements based on their application

although the actual stack diameter may differ due to process and functional variation

SEMI E116-0703 (technical revision)

This Specification may be applied to manufacturing process

M04200 - SEMI M42 - Specification for Compound Semiconductor Epitaxial Wafers Revision:SEMI M42-0816 (Withdrawn 1021) - Withdrawn org in April 2017NOTICE: This Standard was balloted and approved for withdrawal in 2021. Compound semiconductor epitaxial layers have been extensively used for many years as the basis of high speed electronics and optoelectronic devices. There are suppliers of epitaxial layers who will grow material to the customers specification. There is a need to define standardized descriptive terms, tolerance schedules and recommended test methods to reduce ambiguity in the

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